Relaxation of the dielectric response in thin films of vanadium dioxide

The results of studying the processes dielectric relaxation in thin nanocrystalline films vanadium dioxide are presented. existence a non-Debye process was revealed, which is due to presence distribution relaxators over times according Cole-Davidson model. activation energy found be Ep = (0.9 ± 0.1) eV. observed regularities explained by model views system as set whose physical parameters have different numerical values Gaussian size nanocrystallites VO2 film. temperature change process, detected at T 340 K, indicates that complex Mott-Peierls semiconductor-metal phase transition occurs given